In addition, replacing the top Cr/SiO2 contact with BLG may furth

In addition, replacing the top Cr/SiO2 contact with BLG may further improve the characteristics, RXDX-101 in vivo which we leave for future work. Authors’ information AU received his B.Sc. degree in Electrical Engineering from the University of Engineering and Technology, Lahore, Pakistan, in 2007 and is currently working towards his Ph.D. degree in Electrical and Computer Engineering at the University

of Iowa. His research interests include novel non-volatile memories, resistive random access memories, flash memories, and carbon nanomaterial RG7420 supplier synthesis. TR received her B.Sc. honors in May 2001 from the University of Engineering and Technology Lahore, Pakistan majoring in electronics and communication engineering. Afterwards, she worked in Accelerated Technologies Inc. Pakistan, as a software engineer. She worked in SIEMENS Pakistan, for another year before she joined Purdue University, West Lafayette, IN, USA for Ph.D. program. She graduated from her Ph.D. in December 2010 and joined the University of Iowa, USA as adjunct Assistant Professor in the Department of Electrical and Computer Engineering and Department of Physics and Astronomy. Presently, she is an Assistant Professor at Lahore University of Management Sciences, Pakistan. HR is a Professor of Electrical Engineering at the University of the Punjab, Lahore, Pakistan since 2012. Earlier, he was

an learn more Assistant Professor of Electrical and Computer Engineering at the University of Iowa, Iowa City, USA in 2009 to 2013. He was a postdoctoral associate at Cornell University in 2007 to 2009. He received his Ph.D. in 2007 and MS in 2002 from Purdue University; and B.Sc. in 2001 from the University of Engineering and Technology Lahore Pakistan. He has received ‘Magoon Award for Excellence in Teaching’ from Purdue University in 2004. He is also the recipient of ‘Presidential Faculty Fellowship’ in 2010 and ‘Old Gold Fellowship’ in 2011 from the University of Iowa. He has been awarded ‘Junior Associateship’ of the International Centre for Theoretical Physics, Trieste, Italy in 2013. His research group

is focused on ‘anything that is small’ for low-power post-CMOS transistor, spintronics, sensors, and solid-state energy harvesting applications from theoretical, experimental, and computational approaches using graphene, molecule, silicon, novel dielectrics, and Florfenicol carbon nanotube material systems. He has served as an editor of a 600-page book on Graphene Nanoelectronics published by Springer in 2012. Acknowledgements We thank D. Norton, C. Coretsopoulos, and J. Baltrusaitis for useful discussions. We acknowledge the Microfabrication Facility at the University of Iowa for evaporation, and Central Microscopy Research Facility at the University of Iowa for Raman spectroscopy. This work is supported by the MPSFP program of the VPR office at the University of Iowa. References 1. Schottky W: Discrepencies in Ohm’s laws in semiconductors.

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