Phys Rev Lett 2006, 97:155701.CrossRef 35. Singh A, Tsai AP: Melting behaviour of lead and bismuth nano-particles in quasicrystalline matrix – the role of interfaces. Sadhana 2003, 28:63–80.CrossRef 36. Hadjisavvas G, see more Kelires PC: Structure and energetics of Si nanocrystals embedded in a-SiO2. Phys Rev Lett
2004, 93:226104.CrossRef 37. Soulairol R, Cleri F: Interface structure of silicon nanocrystals embedded in an amorphous silica matrix. Solid State Sci 2010, 12:163–171.CrossRef Competing interests The authors declare that they have no competing interests. Authors’ contributions GZ, AP, and JM carried out the spectroscopic measurements as well as calculations. JC and FG designed and deposited the investigated samples. All authors read and
approved the final manuscript.”
“Background Nowadays, electronic devices invade strongly our daily life. In the race to efficiency, they have to be faster and faster, smaller and smaller, and with better and better performance [1–4]. One way to reach this goal is to integrate supercapacitors in their microelectronic circuit. Supercapacitors are commonly used to complete batteries whenever pulse power, long term cycling, and high charge/discharge are required [5–9]. Many studies are currently dedicated to the design of micro-ultracapacitors with different types of carbons [5–7] or pseudo-capacitive materials Poziotinib (RuO2, MnO2 …) [8, 9]. However, their integration in microelectronic circuit is still a challenge. Elaborate silicon based micro-ultracapacitors should facilitate it. Moreover, such devices could directly be manufactured on chips. Recently, porous silicon nanowires (SiNWs) [10], porous silicon coated with gold [11, 12], SiNWs coated with NiO [13, 14], or SiC [15] have been studied as potential materials for supercapacitor electrodes. Si/SiC core-shell nanowires-based electrodes 17-DMAG (Alvespimycin) HCl show the most promising performances and cycling stability, but no studies have been performed in the two electrode devices. More recently, we proved that chemical vapor deposition (CVD)-grown, SiNWs-based electrodes show a promising cycling stability
in an organic electrolyte and a quasi-ideal pure capacitive behavior, i.e., the energy that is stored Alvocidib datasheet thanks to electrolyte ions accumulation at the polarized electrode/electrolyte interface [16]. As pure capacitive supercapacitor capacitance is proportional to the developed surface area on the electrode, increasing the SiNWs length should improve the device capacitance. SiNWs length and doping level can easily be tuned by CVD, thanks to the vapor–liquid-solid (VLS) mechanism [17, 18], using a metal catalyst as seed to the SiNWs growth [19–21]. The SiNWs diameter and density can also be monitored. This work underlines the importance of HCl use during the SiNWs growth by CVD to obtain very long nanowires and investigates the influence of SiNWs length on SiNWs/SiNWs micro-ultracapacitors devices capacitance.
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