Thus, the band edge bending in the conduction and valence band was related to the change in surface charge buy PF299 distribution. Figure
5 I – V curves of Pd-sensitized ZnO nanorods from RT to 300°C. Alternating current (AC) impedance spectroscopy was used to investigate the sensing mechanism in which the potential contributors could be defined [29]. Generally, the conduction process (R) and polarization behavior (C) become dominant in sensing mechanism. The device microstructures are composed of grains, grain boundaries, and the metal/ZnO contact. In the Nyquist plot, the major role players in the high, intermediate, and low frequencies are grains (bulk), grain boundaries (R gb, C gb) and the metal-semiconductor contact (R c, C c) [30]. In order to achieve a single semicircle from the prescribed components, the time constant τ associated with these components must be identical [31]: (1) The total impedance Z T of the device structure
Crenigacestat solubility dmso can be drawn as follows: (2) where Z g, Z gb, and Z c represent the complex impedance contribution of the grains, grain boundaries, and the electrode contacts, respectively [32]. The grain resistance can be estimated from the interception of the arc at high frequency with the real axis [32]. Every individual semicircles has its own unique relaxation frequency ω max (the frequency at the top of the arc), which can be represented as ω max RC = ω max τ = 1, where R and C represent the resistance and capacitance
of the equivalent circuit and τ represents the relaxation time that depends only on the intrinsic properties of the material [33]. The effect of hydrogen gas on the impedance behavior of the sensor at different concentrations is shown in Figure 6. Figure 6 Nyquist plot of Pd-sensitized ZnO nanorods as a function of different H 2 concentrations at room temperature. It was observed that when the gas concentration gradually increased from 40 to 360 ppm, Sclareol the diameter of the arc decreased. The Z′′ Selleck Duvelisib maximum values were smaller than the half values of the Z′ maximum, demonstrating the contribution from the constant phase elements (CPEs) in the equivalent circuit [29]. The best-fitted value for capacitance was obtained by replacing C with a CPE, which frequently describe the behavior of polycrystalline materials having inhomogeneous microstructures such as the grain boundary that gives rise to different distributions of respective relaxation time. The impedance of a CPE was clearly described in [34]. (3) where A is a constant and p is a dimensionless parameter with value of less than unity. When p = 1, the equation represents the characteristics of a capacitor with A = C. The values noted in Table 1 shows that the resistance R gb was varied because of the flow of different hydrogen concentrations.
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