A control sample without BLG was also fabricated as shown in Figure 1b. The thin layer of SiO2 was used to protect C60 film during subsequent metal evaporation step. Figure 1 Device schematics and characterization. (a) Molecular memory with
atomically smooth bilayer graphene sandwiched between 300 nm Ni and 100 nm C60 films. (b) Control device without SB-715992 nmr the bilayer graphene. (c) Raman spectrum of evaporated C60 film on the bilayer graphene is shown as well. A detailed characterization of the synthesized BLG has been reported earlier in [13]. Raman spectroscopy was used to confirm the quality of evaporated C60. A laser power of 2 mW with 5 s scan time and four scans per point is used to avoid sample heating. The Raman spectrum of evaporated C60 film on BLG is also shown in Figure 1c. The dominant peaks are at 491, 1,464, and 1,596 cm−1 wavenumbers, which confirm the coherence of C60 molecular structure even after thermal selleck chemicals evaporation [14, 15]. Results and discussion In Figure 2, we report the transport characteristics in the first and second sweep cycles for the device with BLG contact. The device starts in the low-resistance state and the voltage is increased in the forward direction until it irreversibly Natural Product Library ic50 switches to high-resistance state at
about 0.9 V, as shown in Figure 2a. After switching, the device withstands its high-resistance state, thus exhibiting hysteresis in the first cycle. We rule out the possibility of conductive filament formation (CFF) due to electromigration, since graphene
has a breaking strength value of approximately 42 N/m and is impermeable even to helium atoms [16, 17]. Moreover, in the CFF, current increases after switching, whereas an opposite trend is observed here. Apart from this, we find that the switching voltages for various devices lie in the 0.8 to 1.2 V bias range. This variation may be due to the amorphous and heterogeneous nature of the evaporated SiO2 film [18]. Figure second 2 Transport characteristics in the first and second sweep cycles. (a) During the first sweep cycle, the voltage is swept in the forward direction until the device switches to high-resistance state. During the reverse sweep, the device remains in the high-resistance and shows hysteresis. (b) The device remains in the high-resistance state during the second sweep cycle and no hysteresis or switching is observed. The switching behavior for the second sweep cycle is shown in Figure 2b. The device remains in the high-resistance state without hysteresis. In the subsequent sweep cycles, the device sustains its high-resistance state, thus making it a write-once read-many (WORM) memory device. Next, we report the retention characteristics in Figure 3, by using a read voltage pulse train of 0.4 V bias with 10 ms duration and 0.1% duty cycle. The mean value of current in the low-resistance state is 2.041 mA with a standard deviation of 0.973 × 10−3.
Related posts: